Thermal and Mechanical Metrology of GaN HEMTs
AlGaN/GaN high electron mobility transistors are important for the development of next generation RF communications, solar blind sensors, and power electronics. However, the reliability in these devices are limited, in part, by the intense heating that occurs in the transistors during operation. In addition, mechanical stresses are induced in the devices due to thermomechanical and inverse piezoelectric effects. In this work, we are utilizing IR, Raman Spectroscopy, Photoluminescence, and AFM technologies to explore the temperature and mechanical strain distribution in GaN HEMTs. To goal is to link these parameters to device reliability and degradation observed during operation.